Innovative Collaboration Aims for Mass Production by 2026
US-based Finwave Semiconductor has entered into a partnership with GlobalFoundries (GF) to scale its gallium nitride (GaN)-on-silicon (Si) technology, targeting mobile phone power amplifiers. The collaboration plans to achieve large-scale manufacturing of Finwave’s high-electron mobility transistors (MISHEMTs) at GF’s 200mm facility in Burlington, Vermont, with mass production expected to begin by early 2026. This partnership leverages Finwave’s cutting-edge GaN-on-Si technology alongside GF’s US-based manufacturing capabilities and RF silicon platforms.
GaN-based MISHEMTs offer superior power output and energy efficiency compared to CMOS and gallium arsenide (GaAs) devices, making them ideal for 5G and future 6G applications. This technology is set to deliver significant enhancements in power density and efficiency for power amplifiers, which are crucial for supporting the new high-frequency bands required by 5G, 6G, and Wi-Fi 7 systems.
In addition to this partnership, GF is advancing its own line of 650V GaN products and plans to release 100-200V versions soon. The company is upgrading its Burlington facility and expanding capacity, supported by a US Chips and Science Act grant aimed at bolstering domestic semiconductor manufacturing. GF’s recent acquisition of Tagore Technology’s power GaN intellectual property further demonstrates its commitment to high-volume production of power technologies in the US.
Looking ahead to a potential recovery in smart mobile device sales in 2024, GF CEO Thomas Caulfield highlighted the role of AI-enabled devices as a driving force for increased demand in efficient power semiconductors, particularly from the fourth quarter of 2024.
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